(1) The performance of mid-wave infrared HgCdTe e-avalanche photodiodes at SITP, SPIE Proceedings Volume 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019); 111702M (2019), 2019, 第 3 作者
(2) Backside-illuminated infrared photoluminescence and photoreflectance : Probe of vertical monuniformity of HgCdTe on GaAs, Appl. Phys. Lett., 2010, 第 2 作者
(3) Realization of photoreflectance spectroscopy in verey-long wave infrared of up to 20 μm, Appl. Phys. Lett, 2009, 第 2 作者
(4) Impurity Activation in MBE-grown As-doped HgCdTe by Modulated photoluminescence spectra, Chinese Phys.Lett, 2009, 第 2 作者
(5) MBE HgCdTe on Si and GaAs substrates, Journal of Crystal Growth, 2007, 第 2 作者
(6) MBE HgCdTe: A challenge towards to the realization of third GEN infrared FPAs, Chinese Journal of Semiconductors, 2006, 第 2 作者
(7) Heteroepitaxy of CdTe on tilting Si(211) substrates by MBE, J. Crystal Growth, 2006, 第 2 作者
(8) MBE growth of Si/CdTe(211)B composite substrates, Laser and Infrared, 2005, 第 1 作者
(9) MBE growth of CdTe(211)B composite substrates on Silicon, J. Infrared Millim. Waves, 2005, 第 1 作者