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(2) High quality mid-infrared InAs film grown on (100) GaSb substrate by LPE using a ternary melt,Proc. of SPIE ,2011,第2作者
(3) LPE growth and characterization of mid-infrared InAsSb film on InAs substrate,J.Cryst. Growth,2011,第3作者
(4) Dielectric functions and the interband critical points of InAsSb films grown by a modified LPE techniques,Physica B,2010,第1作者
(5) High quallity of InAsSb epilayer with cutoff wavelength longer than 10 um grown on GaAs by the modified LPE technique,J. Crys. Growth,2009,第1作者
(6) Modified LPE technique growtn and properties of long wavelength InAsSb thick film,J. Alloys and Compd.,2008,第1作者
(7) The preparation and Optical waveguide property of metal alkoxide solution derived PZT thick films,Appl.Phys. Lett.,2004,第1作者