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£¨1£© Flexible cation-based threshold selector for resistive switching memory integration, Science China Information Sciences, 2018, Í¨Ñ¶×÷Õß
£¨2£© Modulating 3D memristor synapse by analog spiking pulses for bioinspired neuromorphic computing, Sci. China-Phys. Mech. Astron., 2018, µÚ 1 ×÷Õß
£¨3£© Effects of capping electrode on ferroelectric properties of Hf0.5Zr0.5O2 thin films, IEEE Electron Devices Lett., 2018, Í¨Ñ¶×÷Õß
£¨4£© Graphene oxide quantum dots based memristors with progressive conduction tuning for artificial synaptic learning, Advanced Functional Materials, 2018, µÚ 6 ×÷Õß
£¨5£© Memristor with Ag-cluster-doped TiO2 films as artificial synapse for neuroinspired computing, Advanced Functional Materials, 2018, Í¨Ñ¶×÷Õß
£¨6£© Breaking current-retention dilemma in cation-based resistive switching device graphene with controlled defects, Advanced Materials, 2018, Í¨Ñ¶×÷Õß
£¨7£© Investigation of retention behavior of TiOx/Al2O3 resistive memory and its failure mechanism based on Meyer-Neldel rule, IEEE Electron Devices Lett., 2018, µÚ 6 ×÷Õß
£¨8£© Artificial neuron based on a threshold switching memristor, IEEE Electron Device Letters, 2018, Í¨Ñ¶×÷Õß
£¨9£© Origin of negative resistance in anion migration controlled resistive memory, Appl. Phys. Lett., 2018, µÚ 6 ×÷Õß
£¨10£© Proton Radiation Effects on Y-Doped HfO2-Based Ferroelectric Memory, IEEE Electron Device Letters, 2018, Í¨Ñ¶×÷Õß
£¨11£© Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition, Phys. Chem. Chem. Phys, 2017, Í¨Ñ¶×÷Õß
£¨12£© HfO2-based highly stable radiation-hardened ferroelectric memory, IEEE Electron Devices Lett., 2017, Í¨Ñ¶×÷Õß
£¨13£© Crystal that remembers: Several ways to utilize nanocrystals in resistive switching memory, J. Phys. D: Appl. Phys., 2017, Í¨Ñ¶×÷Õß
£¨14£© Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics, Appl. Phys. Lett., 2017, µÚ 7 ×÷Õß
£¨15£© Resistive switching performance improvement via modulating nanoscale conductive filament, involving the application of two-dimensional layered materials, Small, 2017, µÚ 3 ×÷Õß
£¨16£© A cell-based clustering model for the reset statistics in RRAM, Appl. Phys. Lett., 2017, µÚ 5 ×÷Õß
£¨17£© Confining cation injection to enhance CBRAM performance by nanopore graphene layer, Small, 2017, Í¨Ñ¶×÷Õß
£¨18£© Graphene and Related Materials for Resistive Random Access Memories, Advanced Electronics Materials, 2017, µÚ 4 ×÷Õß
£¨19£© Emulating short-term and long-term plasticity of bio-synapse based on Cu/a-Si/Pt Memristor, IEEE Electron Devices Lett., 2017, Í¨Ñ¶×÷Õß
£¨20£© Uniformity and retention improvement of TaOx-based conductive bridge random access memory by CuSiN interfacial layer engineering, IEEE Electron Devices Lett., 2017, µÚ 7 ×÷Õß
£¨21£© Electronic imitation of behavioral and psychological synaptic activities by the TiOx/Al2O3-based memristor devices, Nanoscale, 2017, Í¨Ñ¶×÷Õß
£¨22£© Improvement of device reliability by introducing a BEOL-compatible TiN barrier layer in CBRAM, IEEE Electron Devices Lett., 2017, Í¨Ñ¶×÷Õß
£¨23£© Flexible memristors as electronic synapses for neuro-inspired computation based on scotch tape-exfoliated mica substrates, Nano Research, 2017, Í¨Ñ¶×÷Õß
£¨24£© Investigation on the conductive filament growth dynamics in resistive switching memory via a universal Monte Carlo simulator, Scientific Reports, 2017, µÚ 7 ×÷Õß
£¨25£© Intrinsic anionic rearrangement by extrinsic control: Transition of RS and CRS in thermally elevated TiN/HfO2/Pt RRAM, Nanoscale, 2017, µÚ 4 ×÷Õß
£¨26£© Memristor with Ag-cluster-doped TiO2 films as artificial synapse for neuroinspired computing, Advanced Functional Materials, 2017, Í¨Ñ¶×÷Õß
£¨27£© Design of high-performance memristor cell using W-implanted SiO2 films, Appl. Phys. Lett., 2016, Í¨Ñ¶×÷Õß
£¨28£© Eliminating negative-SET behavior by suppressing nanofilament overgrowth in cation-based memory, Advanced Materials, 2016, Í¨Ñ¶×÷Õß
£¨29£© Epitaxial 2D PbS nanoplates arrays with highly efficient infrared response, Advanced Materials, 2016, µÚ 4 ×÷Õß
£¨30£© Analysis of the negative-set behaviors in Cu/ZrO2/Pt devices, Nanoscale Research Letters, 2016, Í¨Ñ¶×÷Õß
£¨31£© Direct observation of conversion between threshold switching and memory switching induced by conductive filament morphology, Advanced Functional Materials, 2014, Í¨Ñ¶×÷Õß
£¨32£© Multilevel unipolar resistive switching with negative differential resistance effect in Ag/SiO2/Pt device, J. Appl. Phys., 2014, Í¨Ñ¶×÷Õß
£¨33£© In-situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory, Appl. Phys. Lett., 2013, µÚ 2 ×÷Õß
£¨34£© Self-rectifying resistive switching device with a-Si/WO3 bilayer, IEEE Electron Devices Lett., 2013, µÚ 3 ×÷Õß
£¨35£© Bipolar one diode-one resistor integration for high-density resistive memory applications, Nanoscale, 2013, µÚ 3 ×÷Õß
£¨36£© Real-time observation on dynamic growt